Many products have not been listed yet. For more products, please contact us

　　If the product model is inconsistent with the displayed image, the model shall prevail. Please contact us for specific product images, and we will arrange for photos to be taken and confirmed in the warehouse

　　We have 16 shared warehouses worldwide, so sometimes it may take several hours to accurately return to you. We apologize for any inconvenience caused. Of course, we will respond to your concerns as soon as possible.

　　5SHX2645L0004 3BHL000389P0104 3BHB003154R0101 Other names:

　　IGCT module 5SHX2645L0004 3BHL000389P0104 3BHB003154R0101

　　5SHX2645L0004 3BHL000389P0104 3BHB003154R0101 thyristor module

　　Power controller 5SHX2645L0004 3BHL000389P0104 3BHB003154R0101

　　5SHX2645L0004 3BHL000389P0104 3BHB003154R0101 Integrated Gate Commutated Thyristor (IGCT) is a high-voltage and high-power power semiconductor switching device that combines the characteristics of a Thyristor and a Gate Turn Off Thyristor (GTO), combining the advantages of a Gate Turn Off Thyristor (GTO) and an Insulated Gate Bipolar Transistor (IGBT). IGCT devices have characteristics such as low on state loss, high blocking voltage, high current density, and fast switching speed, making them widely used in fields such as high-voltage direct current transmission (HVDC), flexible AC transmission systems (FACTS), high-power motor drives, industrial induction heating, and metallurgical smelting.

　　5SHX2645L0004 3BHL000389P0104 3BHB003154R0101 mainly consists of two parts: Main Thyristor and Gate Driver Unit. The main thyristor is responsible for carrying large currents and high voltages, while the gate drive unit controls the gate current to achieve the opening and closing of the main thyristor.

　　The 5SHX2645L0004 3BHL000389P0104 3BHB003154R0101device mainly consists of a GTO thyristor and an integrated gate drive circuit, which controls the gate current to achieve the conduction and turn off of the thyristor. Compared with traditional GTO, the driving circuit of IGCT is more compact and reliable, reducing system costs and improving system reliability.

　　The switching process of 5SHX2645L0004 3BHL000389P0104 3BHB003154R0101 device includes two stages: conduction and turn off. In the conduction stage, by applying a forward current to the gate, the positive feedback mechanism inside the GTO thyristor is established, thereby achieving low resistance conduction of the device. In the turn off stage, by applying reverse current to the gate, the carriers inside the GTO thyristor quickly recombine, thereby achieving rapid device turn off.

　　The design and manufacturing of 5SHX2645L0004 3BHL000389P0104 3BHB003154R0101devices need to consider many factors, such as the device's voltage resistance, current capacity, switching speed, power consumption, and reliability. Therefore, the manufacturing process and material selection of IGCT devices are crucial. With the continuous development of power electronics technology, the performance of IGCT devices is also constantly improving to meet the needs of various high-voltage and high-power applications.

　　The main features of 5SHX2645L0004 3BHL000389P0104 3BHB003154R0101IGCT include:

　　High reliability: Due to its structural design and manufacturing process optimization, IGCT has excellent reliability and is suitable for long-term, high load power transmission and conversion.

　　High efficiency: 5SHX2645L0004 3BHL000389P0104 3BHB003154R0101has very low conduction loss in the conduction state, which helps to improve the overall efficiency of the power conversion system.

　　Fast shutdown: Compared with traditional thyristors, IGCT has a faster shutdown speed, which helps reduce harmonics and electromagnetic interference in the system.

　　Easy to control: 5SHX2645L0004 3BHL000389P0104 3BHB003154R0101 adopts a gate drive method similar to IGBT, making control simpler and more flexible.

　　Overcurrent protection: 5SHX2645L0004 3BHL000389P0104 3BHB003154R0101 has a built-in overcurrent protection mechanism, which can quickly turn off when overcurrent is detected, protecting devices and systems from damage.

　　High power density: 5SHX2645L0004 3BHL000389P0104 3BHB003154R0101 can achieve higher power output in a smaller package size, which is beneficial for saving space and reducing costs.

　　Good thermal stability: 5SHX2645L0004 3BHL000389P0104 3BHB003154R0101 has excellent thermal stability and thermal cycling ability, and can adapt to various complex operating environments.

　　IGCT has a wide range of applications in fields such as high-voltage direct current (HVDC), flexible AC transmission systems (FACTS), electric locomotive traction, large motor drive, wind power generation, and photovoltaic power generation. With the continuous development of power electronics technology, the performance of IGCT is also constantly improving, providing strong support for the safe and efficient operation of the power system.

　　All products on this website are special products, and market prices have been fluctuating,

　　The specific customer service quotation shall prevail, as the product is a new product and the price is not genuine,

　　Please confirm the model, product, price, and other detailed information with customer service before placing an order. The website has been used,

　　The new one is for sale, please contact customer service to communicate.

Warehouse discount goods:

5SHY3545L0003
5SHY3545L0005
5SHY3545L0009
3BHE009681R0101
5SHY3545L0009
5SHY3545L0010
GVC750BE101
3BHE009681R0101
5SHY3545L0014
5SHY3545L0016
GFD233A101
More......