Many products have not been listed yet. For more products, please contact us

　　If the product model is inconsistent with the displayed image, the model shall prevail. Please contact us for specific product images, and we will arrange for photos to be taken and confirmed in the warehouse

　　We have 16 shared warehouses worldwide, so sometimes it may take several hours to accurately return to you. We apologize for any inconvenience caused. Of course, we will respond to your concerns as soon as possible.

　　5SHX1060H0003 3BHE024415R0101 3BHB020538R0001 GVC714A101 Other names:

　　Integrated gate commutated thyristor 5SHX1060H0003 3BHE024415R0101 3BHB020538R0001 GVC714A101

　　5SHX1060H0003 3BHE024415R0101 3BHB020538R0001 GVC714A101  IGCT module

　　Power semiconductor switching device 5SHX1060H0003 3BHE024415R0101 3BHB020538R0001 GVC714A101

　　Key points of 5SHX1060H0003 3BHE024415R0101 3BHB020538R0001 GVC714A101 IGCT thyristor module:

　　Working principle: The working principle of 5SHX1060H0003 3BHE024415R0101 3BHB020538R0001 GVC714A101 IGCT is to apply a forward voltage to the internal PN junction area, inject holes and electrons from the PN junction area into the N-type and P-type induction layers, and form an induced current. At the same time, a certain voltage signal is applied to the gate electrode of IGCT to control the conduction and cutoff of the entire device by controlling the recombination and displacement of holes and electrons in the PN junction region.

　　Structural features: The 5SHX1060H0003 3BHE024415R0101 3BHB020538R0001 GVC714A101 IGCT device has three electrodes: cathode, anode, and gate. Its overall function is similar to that of a turnoff thyristor (GTO), which is a completely controllable power switch. Its conduction and turn off are controlled by control signals (gates).

　　Performance advantage: Compared to traditional thyristors, IGCT has lower conduction voltage drop and higher switching speed, as well as good reverse blocking ability. These advantages make IGCT more reliable and cost-effective in various applications such as high voltage and high current.

　　Application field: The application scope of 5SHX1060H0003 3BHE024415R0101 3BHB020538R0001 GVC714A101 IGCT covers high-power scenarios such as transmission networks, wind power, rail transit, and metallurgy. Due to its simpler structure and smaller size, the frequency converter using IGCT can demonstrate better performance and cost advantages in terms of design difficulty, heat dissipation, and robustness.

　　The working principle of 5SHX1060H0003 3BHE024415R0101 3BHB020538R0001 GVC714A101 IGCT is to apply a forward voltage to the internal PN junction area, injecting holes and electrons from the PN junction area into the N-type and P-type induction layers to form an induced current. At the same time, a certain voltage signal is applied to the gate electrode of IGCT to control the conduction and cutoff of the entire device by controlling the recombination and displacement of holes and electrons in the PN junction region. Specifically, There are three electrodes in IGCT devices: cathode, anode, and gate. If a negative voltage is applied to the gate or the power supply to the gate is disconnected, The electrons and holes in the PN junction region will quickly recombine and move, thereby cutting off the conduction of the entire device.

　　The overall function of 5SHX1060H0003 3BHE024415R0101 3BHB020538R0001 GVC714A101 IGCT is similar to that of a turnable thyristor (GTO), which is a completely controllable power switch. Its conduction and turn off are controlled by control signals (gate). Its working principle is to apply a forward voltage to the internal PN junction area, injecting holes and electrons from the PN junction area into the N-type induction layer and P-type induction layer, forming an induced current. At the same time, a certain voltage signal is applied to the gate electrode of IGCT to control the conduction and cutoff of the entire device by controlling the recombination and displacement of holes and electrons in the PN junction region.

　　There are three electrodes in the 5SHX1060H0003 3BHE024415R0101 3BHB020538R0001 GVC714A101 IGCT device: cathode, anode, and gate. If a negative voltage is applied to the gate or the power supply to the gate is disconnected, The electrons and holes in the PN junction region will quickly recombine and move, thereby cutting off the conduction of the entire device.

　　5SHX1060H0003 3BHE024415R0101 3BHB020538R0001 GVC714A101  IGCT has a wide range of applications, covering high-power scenarios such as transmission networks, wind power, rail transit, and metallurgy. Due to the advantages of combining IGBT and GTO, it is widely used in various applications such as high voltage and high current, IGCT has higher reliability and lower cost. Taking the 4.16kV frequency converter as an example, if IGCT is used, the required number of components can be reduced, and the requirements for design difficulty, heat dissipation, and robustness can be lowered, demonstrating better performance and cost advantages.

　　The IGCT specifications produced by ABB Semiconductor Company include three types: asymmetric, reverse blocking, and reverse conduction, with a total of 14 specifications. These IGCT products have been successfully applied in 6000V high-voltage variable frequency speed regulation equipment, such as ABB ACS1000 devices.

　　All products on this website are special products, and market prices have been fluctuating,

　　The specific customer service quotation shall prevail, as the product is a new product and the price is not genuine,

　　Please confirm the model, product, price, and other detailed information with customer service before placing an order. The website has been used,

　　The new one is for sale, please contact customer service to communicate.

Inventory discount products:
5SHX1445H0001
5SHX1445H0002
5SHX14H4502
5SHX1445H0002
5SHX1960L0004
5SHX2645L0002
5SHX2645L0002
5SHY3545L0003
5SHY3545L0005
5SHY3545L0009
5SHY3545L0010
5SHY3545L0014
5SHX10H6004
More......