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　　3BHB018162R0001 3BHE009681R0101 Other names:

　　Power module 3BHB018162R0001 3BHE009681R0101

　　3BHB018162R0001 3BHE009681R0101 High Voltage Inverter Module

　　Input output controller 3BHB018162R0001 3BHE009681R0101

　　3BHB018162R0001 3BHE009681R0101 IGCT module

　　The 3BHB018162R0001 3BHE009681R0101 IGCT thyristor module is a new type of power semiconductor device used in giant power electronic equipment, which was introduced in 1996. This module is based on GTO structure, utilizing integrated gate structure for gate hard driving, and adopting buffer layer structure and anode transparent emitter technology. Therefore, it possesses the on state characteristics of thyristors and the switching characteristics of transistors.

　　The characteristics of this module include:

　　High voltage switching capability: The IGCT module can quickly switch current under high voltage, achieving precise control of electrical energy, which is crucial for applications such as motor speed regulation, grid stability, and renewable energy integration.

　　High power processing capability: Due to the use of special structures and materials, the IGCT module can handle high-power electrical energy conversion, meeting the needs of high-power applications.

　　Quick response: The IGCT module has fast switching speed and response time, which can achieve fast and accurate control of electrical energy, improve the dynamic performance and stability of the system.

　　Low dynamic loss: Due to the use of buffer structure and shallow emitter technology, the 3BHB018162R0001 3BHE009681R0101 IGCT module reduces dynamic loss by about 50%.

　　Integrated freewheeling diode: A freewheeling diode with good dynamic characteristics is integrated on a chip, achieving an organic combination of low on state voltage drop, high blocking voltage of thyristors, and stable switching characteristics of transistors.

　　Type and Function:

　　The 3BHB018162R0001 3BHE009681R0101 IGCT module is a type of integrated Gate Commutated Thyristors (IGCT), a new type of power semiconductor device introduced in 1996, used in giant power electronic assemblies.

　　It can quickly switch current under high voltage, achieving precise control of electrical energy, which is crucial for applications such as motor speed regulation, grid stability, and renewable energy integration.

　　Due to the use of special structures and materials, this module can handle high-power electrical energy conversion and meet the needs of high-power applications.

　　It has fast switching speed and response time, which can achieve fast and accurate control of electrical energy, improve the dynamic performance and stability of the system.

　　Technical features:

　　IGCT is a new type of high-power semiconductor switching device based on GTO structure, utilizing integrated gate structure for gate hard driving, adopting buffer layer structure and anode transparent emitter technology.
　　Due to the use of buffer structures and shallow emitter technology, dynamic losses have been reduced by approximately 50%.

　　A freewheeling diode with good dynamic characteristics is integrated on a chip, achieving an organic combination of low on state voltage drop, high blocking voltage of thyristors, and stable switching characteristics of transistors.

　　In addition, the 3BHB018162R0001 3BHE009681R0101 IGCT module can also be used in fields such as DCS systems, robot systems, and large servo control systems. The required gate circuit inductance is very low, and it can be connected to multi-layer combination feedthrough PCB gate drive through coaxial gates. When the cathode current is zero, the remaining anode current is completely reversed to the gate unit, and the module maintains a low impedance mode to avoid gate overdrive.

　　IGCT (Integrated Gate Controlled Thyristor) refers to an integrated gate controlled thyristor, which is a high-voltage high-power electronic device and a bidirectional thyristor that can conduct current in both forward and reverse directions. Compared with traditional thyristors, IGCT has lower conduction voltage drop, higher switching speed, and better reverse blocking ability.

　　The working principle of IGCT is to apply a forward voltage to the internal PN junction area, injecting holes and electrons from the PN junction area into the N-type and P-type induction layers, forming an induced current. At the same time, a certain voltage signal is applied to the gate electrode of IGCT to control the conduction and cutoff of the entire device by controlling the recombination and displacement of holes and electrons in the PN junction region.

　　The main structure of IGCT includes N-type substrate, PNPn junction, and PNP junction. Its switch control is achieved by controlling the current on the PNP junction of the thyristor. Due to its unique structure and performance, IGCT is widely used in fields such as high-voltage direct current transmission, variable frequency speed regulation, static reactive power compensation, and power electronic devices.

　　In addition, IGCT combines the characteristics of GTO (gate turnable) thyristors and MOSFETs (metal oxide semiconductor field-effect transistors), making it a new type of power electronic device that emerged in the late 1990s. IGCT has higher reliability and lower cost in various application fields such as high voltage and high current. For example, in a 4.16kV frequency converter, the use of IGCT can significantly reduce the required number of high-voltage IGBTs, and due to its simpler structure and smaller volume, it can demonstrate better performance and cost advantages.

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